AZO/n-type nc-Si:H/ p-type C-Si wafer/Ag Heterojunction solar cells; studying the
properties of nc-Si:H layer and the effect of AZO preparation technique
Fawzy A. Mahmoud
*1,2
, Wafaa Magdy
1,2
1-Solid State Physics Dept., National Research Center, P.O. 12311, Dokki, Giza, Egypt
2-Solar cell lab., Center of Excellence for Advanced Sciences, National Research Centre,
P.O.12311, Dokki, Giza, Egypt
Email
Three samples with the same thickness from n-type nanocrystalline silicon hydrogenated thin
films prepared by RF magnetron sputtering of highly doped n-type Si target onto glass
substrates at 200
o
C as deposition temperature. The RF- power is 100 W, gas pressure is 30
mTorr and the ratio of sputtering Argon hydrogen gases is Ar : H
2
= 80:20. The prepared
samples were annealed at different annealing temperatures; 300
o
C, 400
o
C and 500
o
C
respectively. The annealed films were examined by Raman spectroscopy, and X-ray
Diffraction. The optical and electrical of the prepared layers were investigated also by UV-
VIS-NIR spectrophotometer and Hall measurements respectively.
The optimum n-type nc-Si:H layer was used to construct three different , AZO/n-type nc-
Si:H/ p-type C-Si wafer/Ag , solar cells based on the AZO preparation technique. We used
sprayed AZO, RF sputtered AZO, Sol-Gel AZO in our comparison. The I-V curves of the
three solar cells were measured under 100 mW/cm
2
(AM 1.5) solar simulator irradiation. The
prepared solar cells show not bad I-V curves. We found that the best cell that showed best I-
V curve and cell parameters is the cell based on sputtered AZO.
Keywords:
nanocrystalline Silicon hydrogenated, AZO; structural properties, Electrical properties;
optical properties, Hetrojunction solar cell
PS1 19
-175-
