Study on Surface-textured LPCVD ZnO:B thin films for Enhanced Light-trapping
Effect
Jinsu Yoo, Kihwan Kim, Young-Joo Eo, Ju Hyung Park, Jihye Gwak, Seung-Kyu Ahn, Ara
Cho, SeJin Ahn, Jae-Ho Yun
, Jun-Sik Cho
*
Photovoltaic Laboratory, Korea Institute of Energy Research, 102 Gajeong-ro, Yuseong-gu,
Daejeon, 305-343, South Korea
E-mail:
Due to the improvement of optical and electrical properties, transparent conductive oxides
(TCO) layers have widely used for thin film solar cell fabrication to act as a window layers
with high transparency and contact electrically the cell with low resistivity. Boron-doped zinc
oxide (ZnO:B) thin films are polycrystalline and are composed of large columnar grains with
a preferential crystallographic direction. In this paper, we have prepared ZnO:B films by low
pressure chemical vapor deposition (LPCVD) technique to replace aluminum-doped zinc
oxide (ZnO:Al) films. Diethylzinc (DEZ) and H
2
O were used as reactant gas, while diborane
(B
2
H
6
) was utilized as doping gas. Because DEZ and H
2
O were liquid at the room
temperature, they were injected along with argon (Ar) gas which was used as the carrier gas
for bubbling. Also, DEZ and H
2
O flow rates were controlled by Ar flow rate, bubbler
pressure and bubbler temperature. DEZ, H
2
O and B
2
H
6
flow were set to 350 sccm, 250 sccm
and 0.7 sccm, respectively. The thickness of ZnO:B thin film was varied from 0.5 to 3
㎛
.
By using an optimized process conditions, surface roughness and electrical resistivity were
about 75 nm and 1.5×10
-3
Ω·cm, respectively.
PS1 9
-165-
