p-type Mg doped CuCrO
2
transparent conducting thin layers
E. Chikoidze
1*
, M. Boshta
2
, Hagar Mohamed
2
,
T. Tchelidze
3
, D. Daraselia
3
, D. Japaridze
3
,
A. Shengelaya
3
,Y. Dumont
1
, Cijy Mathai
4
, M. Neumann-Spallart
1
1
Groupe d’Étude de la Matière Condensée (GEMaC), Université de Versailles St. Quentin-
CNRS, Université Paris-Saclay, 45 av. des États-Unis, 78035 Versailles, France
2
Solid State Physics Department, National Research Center, El-Behooth St., 12311
Dokki, Giza, Egypt
3
Department of Physics, Ivane Javakhishvili Tbilisi State University, Chavchavadze 3, 0128
Tbilisi, Georgia
4
Electrical Engineering Department, I.I.T. Bombay, Powai, 400076 Mumbai, India
E-mail:
Several materials
1,2
have been investigated as possible p-type TCO candidates: the
delafossites (CuMO
2
) where M stands for metallic ion, the spinel family (ZnX
2
O
4
X= Co, Rh,
Ir), (Cu
2
S
2
)(Sr
3
Sc
2
O
5
), NiO and ZnO. However, potential p-type TCOs identified at this
point, have conductivities at least one-two orders of magnitude lower than their n-type
counterparts. The best conductivity reported up to day is for doped CuCr
1-x
Mg
x
O
2
, but has
poor transparency
3
.
In this work undoped and Mg-doped CuCrO
2
thin films were deposited by spray
pyrolysis at 400°C on sapphire and fused silica substrates
4
. The deposited layers were
amorphous. The delafossite crystal structure formed after thermal annealing between 600°C
and 960°C in nitrogen atmosphere. The electrical properties (Seebeck and Hall effect) of
undoped and Mg-doped CuCrO
2
thin films on both sapphire and fused silica were studied.
The effect of both sapphire and fused silica substrates on transport properties (mobility) of
undoped and Mg-doped CuCrO
2
thin films was studied. EPR spectroscopy was used for
studying the defects related to Cr
3+
and Cu
2+
.
1. H. Mizoguchi et al.,
Appl. Phys. Lett.
80
(2002), 1207.
2. H. Ohtaet all,
Solid-Sstate Electronics
47
(2003), 2261.
3. R. Nagaragan et al.,
J. Appl.Phys.
89
(2001) 8022.
4.
E. Chikoidze
et al.,
Journal of Physics D
, Applied Physics (2016), in print.
PS1 13
-169-
