Enhanced efficiency of Cu (In, Ga) Se
2
solar cells by
adding Cu
2
ZnSn(S, Se)
4
absorber layer
Hocine HERICHE
1
, Zahir ROUABAH
1,*
, Idris BOUCHAMA
2, 3
Sabrina BENABBAS
1
,
Nadir BOUARISSA
4
and Larbi SELMANI
5
1
Material and Electronic Systems Laboratory, University of Bordj Arréridj, El-Anasser,
34030 Bordj-Bou-Arreridj, Algeria.
2
Electronics Department, Msila University, Msila, 28000, Algeria.
3
Electronics Department, Faculty of Technology, Laboratory of Electrochemical and
Materials, Sétif-1 University, 19000Serif, Algeria.
4
Laboratory of Materials Physics and Its Applications, University of M'sila, 28000 M'sila,
Algeria
5
Electronics Department, University of Bordj Arréridj, El-Anasser, 34030 Bordj-Bou-
Arreridj, Algeria.
*E-mail:
A new structure of thin film solar cells , with Cu(In,Ga)Se
2
and Cu
2
ZnSn(S,Se)
4
(CZTSSe) as absorber layers, CdS cadmium sulphide as buffer layer and ZnO zinc oxide
as window layer, has been simulated using SCAPS one-dimensional simulation program. The
aim of the present work is to investigate the performance of thin film photovoltaic solar cells.
The influence on the photovoltaic cell parameters of several factors are estimated .By adding
CZTSSe as an absorber layer in the conventional CIGS solar cell, we can improve the
efficiency from 17, 91% up to 21.84 %. Bearing in mind that when we use only CIGS, with
the same thickness, we get the efficiency of 19.19 %. This result may help to overcome the
problem of the high cost and scarcity of some of the materials, such as indium and gallium
used in the production of CIGS solar cells.
key words: CIGS, CZTSSe, SCAPS, thin film solar cells.
PS1 15
-171-
