A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectrosc py
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B.K. Meyer (Beginn der gemeinsamen Nitridforschung )
Undoped ZnO
Two lectr satt lites
3.31 3.32 3.33 3.34 3.35 3.36 3.37 3.38
Intensity (arb. units, log scale)
Energy (eV)
ZnO substrate
T = 2 K
TES(DX)
DBX
D
0
X
FX
Donor electron excited in 2S/2P state during D
0
X recombination
Energy spacing of TES is characteristic for donor binding energy
