A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in Zn
Reflection spectrosc py
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B. K. Meyer (A-exci on)
•
Excitonic parameters
D
LT
: 0.96
±
0.1meV
D
56
: 0.12
±
0.1meV
0
200
400
600
800
5L
5T
k
(a) E
c k
c
GaN
T=1.8K
Intensity (arb. units)
E
c
3.477 3.478 3.479 3.480 3.481 3.482
0
50
100
150
200
250
5L
6
k
E
c
Energy (eV)
(b) E || c k
c
6
5T
5L
E
D
LT
D
56
A. Rodina et al Phys. Rev. B 64 ( 2001), 115204
