A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectrosc py
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B.K. Meyer (Begi n der gemeinsamen Nitridforschung )
Undoped ZnO
Accep ors i ZnO
A. Zeuner et al., pss(b) 234, R7 (2002
)
TRPL: non-exp. decay of DAP
Varying distance between A and D
Distant D-A model
N
D
A
0
binding energy E
A
(N)= 165me
V
