A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectrosc py
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B.K. Meyer (Begi n der gemeinsamen Nitridforschung )
Undoped ZnO
Valenc band or ering
C
B
A
E
gap
= 3.5025 eV
7
7
9
7
E
E
AB
= 6 meV
E
BC
= 16.5 meV
C
B
A
E
gap
=
3.4376 eV
9
7
7
7
E
E
AB
= 4.9 meV
E
BC
= 43.7 meV
Lambrecht et al., Phys. Rev. B 65,
075207 (2002)
ZnO
C
B
A
E
gap
= 2.582 eV
7
7
9
7
E
E
AB
= 16 meV
E
BC
= 57 meV
GaN
CdS
