A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectrosc py
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
Bruno Karl M yer ( l se c llaboratio )
Justus-Liebig Universität, Giessen
Bruno Karl Meyer:
D.M. Hofmann, Ch. Wetzel,
W. Stadler, D. Volm, S. Fischer,
G. Steude, H. Zhou, A. Rodina,
A. Zeuner, A. Polity, J Sann,
S. Lautenschläger, C. Neumann,
S. Eisermann
TU Berlin, A.Hoffmann:
L. Eckey, R. Heitz, J. Holst, Q.K.K. Liu,
P. Thurian, H. Siegle, L. Podlowski,
A. Kaschner, M. Strassburg,
G. Kaczmarczyk, U. Haboeck,
R. Kirste, M.R. Wagner, G. Callsen,
T. Kure, C. Nenstiel,
