A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectroscopy
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B.K. Meyer (Begi n der gemeinsamen Nitridforschung )
Undoped ZnO
Accep or complex in Z O
Theory predicts deep energy level for N
o
acceptor (1.3eV)
What is the origin of 165meV acceptor in N doped ZnO?
S. Lautenschläger et al., PSSb 248, 1217 (2011)
