A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectroscopy
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B. K. Meyer (in th eighties)
This Letter reports the first application of an ESR-tagged magnetic circular dichroism
measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs
two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as
intracenter electronic transitions of the As-antisite defect. The analysis of the absorption and
concentration data implies that the "dominant electron trap" (EL2) in GaAs is not the As
antisite.
