A. Hoffmann, Institut für Festkörperphysik, TU Berlin
I
4
- donor bound exciton complex in ZnO
Reflection spectrosc py
Why VCSELs andwhy quantum dots (QDs)?
InGaN insertions inGaN as
dense arrays ofQDs
Surface lasing incavities withoutDBRs:
Narrow line, superlinear growth in intensity,
singlemode character,
high threshold excitationdensity
AlGaN/GaN DBRs and their impacton
the threshold excitationdensity
Room temperature photopumpedVCSELs
Far-field patterns of lasing and spontaneous
emission
Efficient InGaN/GaN/AlGaNLEDs
Resonant-cavity LEDs as prototypes of
current-injectionVCSELs
Conclusions
B.K. Meyer (proj
s)
1989 DFG
Center of Excellence: II-VI compounds ( ZnSe )
1994 DFG
Pilot project: GaN: B.K. Meyer, M. Stutzmann,
F. Bechstedt, K. Lischka, W. Mönch, A. Hoffmann
1994 VW
UV emitters based on AlGaN: B.K. Meyer, A. Hoffmann
J. Christen
1997 DFG
Center of Excellence: GaN and device applications
2005 DFG/SPP 1136
Substitutional effects in ionic solids
2005 BMBF
p-conduction based on ZnO
2006 BMBF
Electro-chromes as epilayer systems
2009 Machbarkeitsfond/Hessen Hydrogen sensors with gasochrome epilayers
2010 EU
ORAMA (Oxide Materials for the Post-Silicon
Electronics Era)
2012 LOEWE-Schwerpunkt
Ionic power engines in aeronautics: basics of
RITSAT
plasma physics and future technologies
2012 LOEWE Schwerpunkt
Storage effects in interfaces
STORE-E
