Sol-gel metal oxide material-based electronics: low-temperature photoactivation, large-
area printing, and direct patterning
Myung-Han Yoon
School of Materials Science and Engineering
GIST (Gwangju Institute of Science and Engineering)
123 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 Korea
E-mail:
Metal oxide-based electronic materials have found important applications in displays,
memories, photovoltaics, and sensors due to their outstanding optical and electrical properties.
Despite the latest advance in printing technology, however, the low temperature
processability has been a bottleneck to realization of such devices on large-area and flexible
substrates. Just recently, many distinctive and effective methods to fabricate metal oxide
films at low temperatures have been reported by several research groups. Unfortunately, there
is still a lack of understanding on the detailed mechanism behind the apparent improvement
in terms of low-temperature processability. Herein, we report on the successful fabrication of
sol-gel metal-oxide semiconductor and dielectric films at low temperature by using UV
irradiation and a general UV-photoactivation mechanism of high-quality oxide film formation
supported by ellipsometry, UV-Vis/IR spectroscopy, XPS, and mass spectrometry analyses.
Additionally, we demonstrate the large-area printing and direct patterning methods for all
solution-based sol-gel metal oxide transistors, and, finally, their application to the
in vitro
bio-electronic devices interfacing with live cells.
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