Properties of electronic potential barriers of superstrate In
2
Se
3
/ODC/CIGS solar cells
using one-dimensional model
Ali Saoucha Salim
1
, Bouchama Idris
1,
Samah Boudour
1,2*
, Nowshad Amin
3
1
Department of Electronic, Faculty of Technology,
University M. Boudiaf 28000Msila, Algeria.
heraga 16014, Algiers /
Thin Films and Applications Unit (UDCMA),Setif- Algeria.
3
Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi,
Selangor, Malaysia.
*Corresponding author.
Tel:
+213(0)661242320;
E-mail
:
In this work, one-dimensional device simulator AMPS-1D (Analysis of
Microelectronic and Photonic Structures) was employed to study the performances of
superstrate SLG/TCO/Cu(In,Ga)Se
2
(CIGS)/ODC/In
2
Se
3
/Metal thin film solar cells. The
impact of TCO/p-CIGS and n-In
2
Se
3
/Metal interfaces has been investigated. The combination
of optical transparency and electrical conductivity for TCO front contact layer is capable of
yielding high efficiency. Several transparent conducting oxides (TCOs) materials and metals
have been tested respectively as a front and buck contact layers for superstrate CIGS solar
cells. The presence of barriers in the front and back contact in the structure can significantly
affect the cell performance by limit the carriers current flow. The influence of various
parameters for the front and the back structures was studied and the corresponding design
optimization was provided. The depletion region overlapping between the TCO/CIGS and
In
2
Se
3
/Metal junctions will result in the decrease of the solar cell performance. The
In
2
Se
3
/Metal Schottky contact can be utilized as the back reflector in the buffer layer. A best
efficiency of 19.3% (with
V
oc
≈ 0.78 V,
J
sc
≈ 33.5 mA/cm
2
and FF ≈ 0.82) has been achieved
with ZnSn
2
O
3
-based as TCO front contact layer and Zn-based back contact layer. All these
simulation results give some important indication to lead to higher efficiency of superstrate
CIGS solar cells for feasible fabrication.
Key words
: Superstrate solar cells, Cu(In,Ga)Se
2
, Thin films, AMPS-1D.
PS2 32
-226-
