Fabrication and Characterizations of Thin Film ZnON Diode
Mohamad Hazwan bin Mohd Daut*, Guangyu Yao, Hanbin Ma, Arokia Nathan
Department of Engineering, University of Cambridge, United Kingdom
*Contact Details:
(email) and +44(0)1223762412 (telephone
)
In this presentation, the implementation of zinc oxynitride (ZnON) as a semiconductor in thin
film metal-insulator-semiconductor (MIS) diode structure is investigated. ZnON layer is
deposited by reactive magnetron sputtering. MIS diode behaves differently depending on the
thickness and type of the insulator and also the work function of the metal. Starting from a
thick insulator, the thickness of the insulator is progressively reduced and the effect of this is
investigated through the J-V and C-V curve of the MIS diode under forward and reverse
biased condition. The effects of using different insulators are also investigated. Two types of
insulators are implemented; aluminium oxide deposited through an atomic layer deposition
process and silicon nitride using plasma enhanced chemical vapour deposition. Nickel is used
as the metal in the MIS structure. The structure is almost similar to metal-semiconductor
Schottky diode, however, the presence of a thin insulator can prevent Fermi level pinning and
hence could contribute to better performance. The performance of the MIS diode will then be
analysed and compared to the performance of other thin film diodes reported in literature.
The fabrication technique is simple and can be performed at low temperature (<200
o
C).
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